FQD5N50TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 1.75A, 10V

Number of Elements :

1

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 25V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

2.5W Ta 50W Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

500V

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Vgs (Max) :

±30V

Avalanche Energy Rating (Eas) :

300 mJ

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

DS Breakdown Voltage-Min :

500V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Surface Mount :

yes

Terminal Finish :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

Qualification Status :

COMMERCIAL

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

Series :

QFET®

Pulsed Drain Current-Max (IDM) :

14A

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

3.5A