FQD5N50CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

300 mJ

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Transistor Element Material :

SILICON

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

4A

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

500V

Pbfree Code :

yes

Pin Count :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

500V

Additional Feature :

FAST SWITCHING

Power Dissipation-Max :

2.5W Ta 48W Tc

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

16A

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-252AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED