FQD5N50CTM

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Mfr.Part #
FQD5N50CTM
Manufacturer
Fairchild Semiconductor
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 500V 4A DPAK
Stock
8,577
In Stock :
8,577

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
3
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
500V
Transistor Element Material :
SILICON
Power Dissipation-Max :
2.5W Ta 48W Tc
Vgs(th) (Max) @ Id :
4V @ 250µA
Series :
QFET®
JEDEC-95 Code :
TO-252AA
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 2A, 10V
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±30V
Drain Current-Max (Abs) (ID) :
4A
Additional Feature :
FAST SWITCHING
Terminal Finish :
MATTE TIN
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
COMMERCIAL
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Mounting Type :
Surface Mount
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Number of Terminations :
2
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
4A Tc
Drain to Source Voltage (Vdss) :
500V
Surface Mount :
yes
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
300 mJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Position :
Single
Terminal Form :
Gull wing
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Pulsed Drain Current-Max (IDM) :
16A
JESD-30 Code :
R-PSSO-G2
Input Capacitance (Ciss) (Max) @ Vds :
625pF @ 25V
Datasheets
FQD5N50CTM
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQD5N50CTM from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Terminations:2, FQD5N50CTM pinout, FQD5N50CTM datasheet PDF, FQD5N50CTM amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQD5N50CTM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQD5N50CTM


N-Channel Tape & Reel (TR) 1.4 Ω @ 2A, 10V ±30V 625pF @ 25V 24nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63

FQD5N50CTM Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 300 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 625pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 4A.Pulsed drain current is maximum rated peak drain current 16A.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FQD5N50CTM Features


the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 16A.
a 500V drain to source voltage (Vdss)


FQD5N50CTM Applications


There are a lot of Rochester Electronics, LLC
FQD5N50CTM applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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