FQD4P25TM-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Pbfree Code :

yes

Mounting Type :

Surface Mount

Number of Pins :

3

Fall Time (Typ) :

27 ns

Drain to Source Voltage (Vdss) :

250V

Continuous Drain Current (ID) :

3.1A

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 25V

Turn On Delay Time :

9.5 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

14 ns

Weight :

260.37mg

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Power Dissipation :

45W

Number of Elements :

1

Radiation Hardening :

No

Resistance :

2.1Ohm

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Rise Time :

60ns

Power Dissipation-Max :

2.5W Ta 45W Tc

Lead Free :

Lead Free

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

2

Terminal Form :

Gull wing

FET Type :

P-Channel

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

2.1 Ω @ 1.55A, 10V

Factory Lead Time :

7 Weeks

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

-250V

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

280 mJ