FQD4N20TM
- Mfr.Part #
- FQD4N20TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 3
- Stock
- 4,893
- In Stock :
- 4,893
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 6.5nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Turn-Off Delay Time :
- 7 ns
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Rise Time :
- 50ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Resistance :
- 1.4Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 220pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Reach Compliance Code :
- not_compliant
- Continuous Drain Current (ID) :
- 3A
- JESD-30 Code :
- R-PSSO-G2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Avalanche Energy Rating (Eas) :
- 52 mJ
- Drain Current-Max (Abs) (ID) :
- 3A
- Drain to Source Breakdown Voltage :
- 200V
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 2.5W Ta 30W Tc
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 7 ns
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Current Rating :
- 3A
- Voltage - Rated DC :
- 200V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Qualification Status :
- Not Qualified
- Series :
- QFET®
- Number of Elements :
- 1
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 2.5W
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 1.5A, 10V
- Fall Time (Typ) :
- 25 ns
- Factory Lead Time :
- 4 Weeks
- Weight :
- 260.37mg
- Datasheets
- FQD4N20TM

N-Channel Tape & Reel (TR) 1.4 Ω @ 1.5A, 10V ±30V 220pF @ 25V 6.5nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD4N20TM Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 52 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 220pF @ 25V.This device has a continuous drain current (ID) of [3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=200V, the drain-source breakdown voltage is 200V.A device's drain current is its maximum continuous current, and this device's drain current is 3A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 7 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Its overall power consumption can be reduced by using drive voltage (10V).
FQD4N20TM Features
the avalanche energy rating (Eas) is 52 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 7 ns
FQD4N20TM Applications
There are a lot of ON Semiconductor
FQD4N20TM applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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