FQB8N60CFTM
- Mfr.Part #
- FQB8N60CFTM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 6.26A D2PAK
- Stock
- 6,964
- In Stock :
- 6,964
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- AVALANCHE RATED
- Series :
- FRFET®
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 3.13A, 10V
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Surface Mount :
- yes
- Pin Count :
- 3
- Pbfree Code :
- yes
- Qualification Status :
- COMMERCIAL
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 600V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 6.26A Tc
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 6.26A
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- DS Breakdown Voltage-Min :
- 600V
- Peak Reflow Temperature (Cel) :
- 260
- Avalanche Energy Rating (Eas) :
- 160 mJ
- Power Dissipation-Max :
- 147W Tc
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 25A
- JESD-30 Code :
- R-PSSO-G2
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.255pF @ 25V
- Vgs (Max) :
- ±30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- MATTE TIN
- Reach Compliance Code :
- Unknown
- Datasheets
- FQB8N60CFTM
FQB8N60CFTM Documents

N-Channel Tape & Reel (TR) 1.5 Ω @ 3.13A, 10V ±30V 1.255pF @ 25V 36nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB8N60CFTM Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 160 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1.255pF @ 25V.6.26A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 25A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 600V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
FQB8N60CFTM Features
the avalanche energy rating (Eas) is 160 mJ
based on its rated peak drain current 25A.
a 600V drain to source voltage (Vdss)
FQB8N60CFTM Applications
There are a lot of Rochester Electronics, LLC
FQB8N60CFTM applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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