FQB5P10TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Transistor Application :

SWITCHING

FET Type :

P-Channel

Avalanche Energy Rating (Eas) :

55 mJ

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 2.25A, 10V

Number of Terminations :

2

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Case Connection :

DRAIN

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

100V

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Drain Current-Max (Abs) (ID) :

4.5A

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Power Dissipation-Max :

3.75W Ta 40W Tc

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

18A