FQB4N80TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

800V

Pbfree Code :

yes

Element Configuration :

Single

Height :

4.83mm

Mounting Type :

Surface Mount

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

35 ns

Number of Elements :

1

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Vgs (Max) :

±30V

Series :

QFET®

Published :

2000

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.95A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 25V

Power Dissipation-Max :

3.13W Ta 130W Tc

Contact Plating :

Tin

Threshold Voltage :

5V

Rise Time :

45ns

ECCN Code :

EAR99

Factory Lead Time :

10 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

Lead Free :

Lead Free

Fall Time (Typ) :

35 ns

Terminal Form :

Gull wing

JESD-609 Code :

e3

Voltage - Rated DC :

800V

Power Dissipation :

3.13W

Avalanche Energy Rating (Eas) :

460 mJ

Current Rating :

3.9A

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

REACH SVHC :

No SVHC

Weight :

1.31247g

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

3.9A

Turn On Delay Time :

16 ns

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Transistor Application :

SWITCHING

Resistance :

3.6Ohm

Gate to Source Voltage (Vgs) :

30V