FQB47P06TM-AM002
- Mfr.Part #
- FQB47P06TM-AM002
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 47A D2PAK
- Stock
- 30,991
- In Stock :
- 30,991
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 47A Tc
- Avalanche Energy Rating (Eas) :
- 820 mJ
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Pbfree Code :
- yes
- Vgs (Max) :
- ±25V
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 188A
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- FET Type :
- P-Channel
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 23.5A, 10V
- Power Dissipation-Max :
- 3.75W Ta 160W Tc
- Drain-source On Resistance-Max :
- 0.026ohm
- DS Breakdown Voltage-Min :
- 60V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Published :
- 2013
- Drain to Source Voltage (Vdss) :
- 60V
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 7 Weeks
- Transistor Element Material :
- SILICON
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Series :
- QFET®
- Drain Current-Max (Abs) (ID) :
- 47A
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- FQB47P06TM-AM002

P-Channel Tape & Reel (TR) 26m Ω @ 23.5A, 10V ±25V 3600pF @ 25V 110nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB47P06TM-AM002 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 820 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3600pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 47A.A maximum pulsed drain current of 188A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
FQB47P06TM-AM002 Features
the avalanche energy rating (Eas) is 820 mJ
based on its rated peak drain current 188A.
a 60V drain to source voltage (Vdss)
FQB47P06TM-AM002 Applications
There are a lot of ON Semiconductor
FQB47P06TM-AM002 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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