FQA90N15

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

375W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Number of Terminations :

3

Voltage - Rated DC :

150V

Height :

18.9mm

Gate Charge (Qg) (Max) @ Vgs :

285nC @ 10V

Transistor Application :

SWITCHING

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Number of Elements :

1

Series :

QFET®

Length :

15.8mm

Pbfree Code :

yes

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

150V

Threshold Voltage :

4V

Turn-Off Delay Time :

470 ns

Qualification Status :

Not Qualified

Width :

5mm

JESD-609 Code :

e3

Factory Lead Time :

10 Weeks

Vgs (Max) :

±25V

Packaging :

Tube

Element Configuration :

Single

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

6.401g

Power Dissipation-Max :

375W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

410 ns

Turn On Delay Time :

105 ns

Current Rating :

90A

Mount :

Through Hole

Rise Time :

760ns

Transistor Element Material :

SILICON

Package / Case :

TO-3P-3, SC-65-3

Rds On (Max) @ Id, Vgs :

18m Ω @ 45A, 10V

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 10 hours ago)

Input Capacitance (Ciss) (Max) @ Vds :

8700pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Continuous Drain Current (ID) :

90A

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

25V

Operating Mode :

ENHANCEMENT MODE