FQA90N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

16m Ω @ 45A, 10V

Weight :

6.401g

Element Configuration :

Single

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

90A

Package / Case :

TO-3P-3, SC-65-3

Turn On Delay Time :

30 ns

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Current Rating :

90A

Resistance :

16mOhm

Transistor Element Material :

SILICON

Number of Terminations :

3

Number of Pins :

3

Vgs (Max) :

±25V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

3250pF @ 25V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

214W Tc

Power Dissipation :

214W

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Fall Time (Typ) :

160 ns

JESD-609 Code :

e3

Published :

2013

Drain to Source Breakdown Voltage :

80V

Radiation Hardening :

No

Mount :

Through Hole

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Voltage - Rated DC :

80V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Turn-Off Delay Time :

100 ns

Mounting Type :

Through Hole

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Pbfree Code :

yes

Rise Time :

360ns

Factory Lead Time :

9 Weeks

Gate to Source Voltage (Vgs) :

25V

Operating Temperature :

-55°C~175°C TJ