FQA44N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Width :

5mm

Package / Case :

TO-3P-3, SC-65-3

HTS Code :

8541.29.00.95

Factory Lead Time :

4 Weeks

Turn-Off Delay Time :

240 ns

Drain to Source Breakdown Voltage :

300V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

ECCN Code :

EAR99

Pbfree Code :

yes

Continuous Drain Current (ID) :

43.5A

FET Type :

N-Channel

Weight :

6.401g

Rds On (Max) @ Id, Vgs :

69m Ω @ 21.75A, 10V

Rise Time :

470ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Power Dissipation :

310W

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

310W Tc

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

1700 mJ

Length :

15.8mm

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Number of Elements :

1

Height :

20.1mm

Published :

2013

Vgs (Max) :

±30V

Voltage - Rated DC :

300V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.069Ohm

Current - Continuous Drain (Id) @ 25°C :

43.5A Tc

Packaging :

Tube

Number of Pins :

3

Element Configuration :

Single

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

174A

Number of Terminations :

3

Fall Time (Typ) :

230 ns

Current Rating :

43.5A

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Radiation Hardening :

No

Turn On Delay Time :

85 ns

Operating Mode :

ENHANCEMENT MODE