FQA40N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Width :

5mm

Factory Lead Time :

9 Weeks

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

40A

Turn-Off Delay Time :

120 ns

Series :

QFET®

Power Dissipation-Max :

280W Tc

Packaging :

Tube

Transistor Element Material :

SILICON

FET Type :

N-Channel

Rise Time :

580ns

Height :

18.9mm

Threshold Voltage :

5V

JESD-609 Code :

e3

Mount :

Through Hole

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

280W

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

250V

Transistor Application :

SWITCHING

Length :

15.8mm

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

Turn On Delay Time :

70 ns

Weight :

6.401g

Package / Case :

TO-3P-3, SC-65-3

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Contact Plating :

Tin

Voltage - Rated DC :

250V

Fall Time (Typ) :

165 ns

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

800 mJ

Current Rating :

40A

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Lead Free :

Lead Free

Vgs (Max) :

±30V

Element Configuration :

Single

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.07Ohm

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

70m Ω @ 20A, 10V