FQA19N60

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

5V

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

18.5A Tc

Rds On (Max) @ Id, Vgs :

380m Ω @ 9.3A, 10V

Rise Time :

210ns

Number of Elements :

1

Mounting Type :

Through Hole

Voltage - Rated DC :

600V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Fall Time (Typ) :

135 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn On Delay Time :

65 ns

ECCN Code :

EAR99

Turn-Off Delay Time :

150 ns

Drain to Source Breakdown Voltage :

600V

Number of Pins :

3

Transistor Application :

SWITCHING

Voltage :

600V

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Element Configuration :

Single

Published :

2000

Package / Case :

TO-3P-3, SC-65-3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

300W

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

1150 mJ

Operating Temperature :

-55°C~150°C TJ

Current Rating :

18.5A

FET Type :

N-Channel

Vgs (Max) :

±30V

Series :

QFET®

Width :

5mm

Number of Terminations :

3

Factory Lead Time :

4 Weeks

Terminal Finish :

Tin (Sn)

HTS Code :

8541.29.00.95

Mount :

Through Hole

Current :

16A

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

18.5A

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

15.8mm

Power Dissipation-Max :

300W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Height :

18.9mm

Drive Voltage (Max Rds On,Min Rds On) :

10V