FQA10N80C

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Mfr.Part #
FQA10N80C
Manufacturer
Fairchild Semiconductor
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 800V 10A TO3P
Stock
7,600
In Stock :
7,600

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
5V @ 250μA
Qualification Status :
COMMERCIAL
Transistor Element Material :
SILICON
Number of Terminations :
3
Terminal Finish :
MATTE TIN
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs (Max) :
±30V
JESD-609 Code :
e3
Pulsed Drain Current-Max (IDM) :
40A
Gate Charge (Qg) (Max) @ Vgs :
58nC @ 10V
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Pin Count :
3
Peak Reflow Temperature (Cel) :
Not Applicable
Reach Compliance Code :
Unknown
Packaging :
Tube
Power Dissipation-Max :
240W Tc
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5A, 10V
Package / Case :
TO-3P-3, SC-65-3
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Terminal Position :
Single
DS Breakdown Voltage-Min :
800V
JESD-30 Code :
R-PSFM-T3
Input Capacitance (Ciss) (Max) @ Vds :
2.8pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
QFET®
Drain to Source Voltage (Vdss) :
800V
Avalanche Energy Rating (Eas) :
920 mJ
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Drain Current-Max (Abs) (ID) :
10A
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
10A Tc
FET Type :
N-Channel
Number of Elements :
1
Datasheets
FQA10N80C
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQA10N80C from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-3P-3, SC-65-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, FQA10N80C pinout, FQA10N80C datasheet PDF, FQA10N80C amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQA10N80C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQA10N80C


N-Channel Tube 1.1 Ω @ 5A, 10V ±30V 2.8pF @ 25V 58nC @ 10V 800V TO-3P-3, SC-65-3

FQA10N80C Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 920 mJ.The maximum input capacitance of this device is 2.8pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 10A.There is no pulsed drain current maximum for this device based on its rated peak drain current 40A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 800V.The drain-to-source voltage (Vdss) of this transistor needs to be at 800V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

FQA10N80C Features


the avalanche energy rating (Eas) is 920 mJ
based on its rated peak drain current 40A.
a 800V drain to source voltage (Vdss)


FQA10N80C Applications


There are a lot of Rochester Electronics, LLC
FQA10N80C applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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