FQA19N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Voltage - Rated DC :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

300W Tc

Mounting Type :

Through Hole

Width :

5mm

Current :

16A

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Pbfree Code :

yes

Threshold Voltage :

5V

Published :

2000

Length :

15.8mm

Height :

18.9mm

Transistor Application :

SWITCHING

Turn On Delay Time :

65 ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

380m Ω @ 9.3A, 10V

Current - Continuous Drain (Id) @ 25°C :

18.5A Tc

Package / Case :

TO-3P-3, SC-65-3

Series :

QFET®

Terminal Finish :

Tin (Sn)

Rise Time :

210ns

FET Type :

N-Channel

Number of Pins :

3

Voltage :

600V

Number of Elements :

1

Radiation Hardening :

No

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Fall Time (Typ) :

135 ns

Lead Free :

Lead Free

HTS Code :

8541.29.00.95

Avalanche Energy Rating (Eas) :

1150 mJ

Mount :

Through Hole

Power Dissipation :

300W

Turn-Off Delay Time :

150 ns

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Current Rating :

18.5A

Continuous Drain Current (ID) :

18.5A

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Drain to Source Breakdown Voltage :

600V

Gate to Source Voltage (Vgs) :

30V