FQA18N50V2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

COMMERCIAL

Avalanche Energy Rating (Eas) :

330 mJ

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3.29pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

20A

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

500V

Rds On (Max) @ Id, Vgs :

265m Ω @ 10A, 10V

Terminal Finish :

MATTE TIN

Number of Terminations :

3

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

80A

Transistor Element Material :

SILICON

Package / Case :

TO-3P-3, SC-65-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.265Ohm

Terminal Position :

Single

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Power Dissipation-Max :

277W Tc

Reach Compliance Code :

Unknown

Series :

QFET®

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

DS Breakdown Voltage-Min :

500V

Number of Elements :

1

Surface Mount :

No

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Pin Count :

3