FQA17P10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

175°C

Power Dissipation :

120W

Rds On (Max) @ Id, Vgs :

190mOhm @ 9A, 10V

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

-100V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Drain to Source Voltage (Vdss) :

100V

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Supplier Device Package :

TO-3P

Rise Time :

200ns

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 25V

Mounting Type :

Through Hole

Fall Time (Typ) :

100 ns

Continuous Drain Current (ID) :

18A

Power Dissipation-Max :

120W Tc

Turn-Off Delay Time :

45 ns

Element Configuration :

Single

Packaging :

Tube

Voltage - Rated DC :

-100V

RoHS Status :

RoHS Compliant

Number of Pins :

3

Rds On Max :

190 mΩ

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Drain to Source Resistance :

190mOhm

Min Operating Temperature :

-55°C

Current Rating :

-18A

Mount :

Through Hole

Input Capacitance :

1.1nF

Series :

QFET®

Lead Free :

Lead Free

Published :

2002

Package / Case :

TO-3P-3, SC-65-3