FQA16N25C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Package / Case :

TO-3P-3, SC-65-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

250V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Power Dissipation-Max :

180W Tc

Gate Charge (Qg) (Max) @ Vgs :

53.5nC @ 10V

Number of Terminations :

3

DS Breakdown Voltage-Min :

250V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

17.8A

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

1.08pF @ 25V

Qualification Status :

COMMERCIAL

Pulsed Drain Current-Max (IDM) :

71.2A

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

FET Type :

N-Channel

Surface Mount :

No

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

270m Ω @ 8.9A, 10V

Drain-source On Resistance-Max :

0.27Ohm

Peak Reflow Temperature (Cel) :

Not Applicable

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

17.8A Tc

Avalanche Energy Rating (Eas) :

410 mJ

Number of Elements :

1

Series :

QFET®