FMBA06

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

250mV

Max Power Dissipation :

700mW

Voltage - Rated DC :

80V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

700mW

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Collector Base Voltage (VCBO) :

80V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Max Collector Current :

500mA

Transistor Application :

AMPLIFIER

Element Configuration :

Dual

Number of Elements :

2

Collector Emitter Breakdown Voltage :

80V

ECCN Code :

EAR99

Current Rating :

500mA

Weight :

36mg

Pbfree Code :

yes

Gain Bandwidth Product :

100MHz

Terminal Form :

Gull wing

Transition Frequency :

100MHz

Collector Emitter Voltage (VCEO) :

80V

hFE Min :

100

Base Part Number :

FMBA06

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Mount :

Surface Mount

Transistor Type :

2 NPN (Dual)

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

100nA

Contact Plating :

Tin

Frequency :

100MHz

Mounting Type :

Surface Mount

Max Breakdown Voltage :

80V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Number of Terminations :

6

Number of Pins :

6

Operating Temperature :

-55°C~150°C TJ

Polarity :

NPN

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

4V