FMB5551

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Terminations :

6

Published :

2004

Terminal Form :

Gull wing

Voltage - Rated DC :

160V

Packaging :

Tape and Reel (TR)

Polarity :

NPN

Element Configuration :

Dual

Radiation Hardening :

No

Length :

3mm

Collector Emitter Saturation Voltage :

200mV

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

160V

Max Power Dissipation :

700mW

Transistor Type :

2 NPN (Dual)

Factory Lead Time :

4 Weeks

Power Dissipation :

700mW

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Weight :

36mg

Emitter Base Voltage (VEBO) :

6V

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Current - Collector Cutoff (Max) :

50nA ICBO

Base Part Number :

FMB5551

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

180V

Terminal Finish :

Tin (Sn)

hFE Min :

80

Frequency :

300MHz

Collector Emitter Breakdown Voltage :

160V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

Max Collector Current :

600mA

Transition Frequency :

100MHz

Current Rating :

600mA

Lead Free :

Lead Free

Height :

1.12mm

Width :

1.68mm

Gain Bandwidth Product :

300MHz

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Pins :

6

RoHS Status :

ROHS3 Compliant