FMB5551
- Mfr.Part #
- FMB5551
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS 2NPN 160V 0.6A SUPERSOT-6
- Stock
- 2,567
- In Stock :
- 2,567
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Transition Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Base Part Number :
- FMB5551
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 2
- Number of Terminations :
- 6
- Collector Base Voltage (VCBO) :
- 180V
- Number of Pins :
- 6
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- 2 NPN (Dual)
- Published :
- 2004
- Collector Emitter Voltage (VCEO) :
- 160V
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Length :
- 3mm
- Polarity :
- NPN
- Weight :
- 36mg
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 160V
- Terminal Form :
- Gull wing
- Height :
- 1.12mm
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Gain Bandwidth Product :
- 300MHz
- Max Collector Current :
- 600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Element Configuration :
- Dual
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 200mV
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 600mA
- hFE Min :
- 80
- Width :
- 1.68mm
- Frequency :
- 300MHz
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 160V
- Max Power Dissipation :
- 700mW
- Power Dissipation :
- 700mW
- Datasheets
- FMB5551

FMB5551 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ON Semiconductor stock available at
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