FMB200

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Emitter Base Voltage (VEBO) :

-6V

Number of Elements :

2

Radiation Hardening :

No

Polarity :

PNP

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Transistor Type :

2 PNP (Dual)

JESD-609 Code :

e3

Lifecycle Status :

LIFETIME (Last Updated: 5 days ago)

Factory Lead Time :

28 Weeks

Number of Pins :

6

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Height :

1mm

Transistor Application :

AMPLIFIER

Max Breakdown Voltage :

45V

Length :

3mm

Current - Collector Cutoff (Max) :

50nA

ECCN Code :

EAR99

Voltage - Rated DC :

-45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 5V

Operating Temperature :

-55°C~150°C TJ

Gain Bandwidth Product :

300MHz

Lead Free :

Lead Free

Frequency :

300MHz

Mounting Type :

Surface Mount

Pbfree Code :

yes

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

400mV @ 20mA, 200mA

Weight :

36mg

Collector Emitter Breakdown Voltage :

45V

Power Dissipation :

700mW

Current Rating :

-500mA

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

700mW

hFE Min :

100

Collector Emitter Voltage (VCEO) :

45V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Max Collector Current :

500mA

Collector Emitter Saturation Voltage :

400mV

Transition Frequency :

300MHz

Transistor Element Material :

SILICON

Element Configuration :

Dual

Published :

2017

Base Part Number :

FMB200

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

-60V

Width :

1.7mm