FKP253
- Mfr.Part #
- FKP253
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 20A TO220
- Stock
- 22,364
- In Stock :
- 22,364
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Bulk
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Supplier Device Package :
- TO-220
- Surface Mount :
- No
- Series :
- --
- HTS Code :
- 8541.29.00.95
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- Mount :
- Through Hole
- Packaging :
- Bulk
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta
- Drain to Source Voltage (Vdss) :
- 250V
- Factory Lead Time :
- 12 Weeks
- JEDEC-95 Code :
- TO-220AB
- Continuous Drain Current (ID) :
- 20A
- Avalanche Energy Rating (Eas) :
- 160 mJ
- DS Breakdown Voltage-Min :
- 250V
- Published :
- 2007
- FET Feature :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 1600pF @ 25V
- Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Reach Compliance Code :
- Unknown
- Product Status :
- Not For New Designs
- Pulsed Drain Current-Max (IDM) :
- 80A
- Terminal Form :
- THROUGH-HOLE
- Lead Free :
- Lead Free
- Terminal Position :
- Single
- Package / Case :
- TO-220-3 Full Pack
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 40W (Tc)
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Rds On (Max) @ Id, Vgs :
- 95m Ω @ 10A, 10V
- Package Shape :
- RECTANGULAR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 40W Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- Sanken Electric Co Ltd
- Drain-source On Resistance-Max :
- 0.095Ohm
- Number of Terminations :
- 3
- Number of Terminals :
- 3
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Datasheets
- FKP253

N-Channel Bulk 95m Ω @ 10A, 10V ±30V 1600pF @ 25V 250V TO-220-3 Full Pack
FKP253 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 160 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 80A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 250V in order to maintain normal operation.Operating this transistor requires a 250V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FKP253 Features
the avalanche energy rating (Eas) is 160 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 80A.
a 250V drain to source voltage (Vdss)
FKP253 Applications
There are a lot of Sanken
FKP253 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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