FJV4101RMTF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Pins :

3

Max Power Dissipation :

200mW

Element Configuration :

Single

Resistor - Base (R1) :

4.7 k Ω

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Polarity :

PNP

Resistor - Emitter Base (R2) :

4.7 k Ω

Weight :

30mg

Width :

1.3mm

Height :

930μm

Transistor Type :

PNP - Pre-Biased

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

50V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Power Dissipation :

200mW

Terminal Finish :

Tin (Sn)

Voltage - Rated DC :

-50V

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Saturation Voltage :

-300mV

Number of Terminations :

3

Min Operating Temperature :

-55°C

RoHS Status :

RoHS Compliant

Number of Elements :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Frequency - Transition :

200MHz

Max Breakdown Voltage :

50V

Continuous Collector Current :

-100mA

Published :

2013

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Transition Frequency :

200MHz

Radiation Hardening :

No

hFE Min :

20

Emitter Base Voltage (VEBO) :

-10V

Lead Free :

Lead Free

Pbfree Code :

yes

Terminal Form :

Gull wing

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Max Collector Current :

100mA

Collector Base Voltage (VCBO) :

-50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 10mA 5V

Current Rating :

-100mA

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Length :

2.92mm

HTS Code :

8541.21.00.95

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

FJV4101