FJPF5027RTU
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- Mfr.Part #
- FJPF5027RTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 800V 3A TO220F-3
- Stock
- 9,070
- In Stock ：
- 9,070
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- hFE Min :
- 10
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Max Power Dissipation :
- 40W
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 3A
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- FJPF5027
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Gain Bandwidth Product :
- 15MHz
- Case Connection :
- Isolated
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 200mA 5V
- Current Rating :
- 3A
- Factory Lead Time :
- 2 Weeks
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 800V
- Collector Base Voltage (VCBO) :
- 1.1kV
- Mount :
- Through Hole
- Voltage - Rated DC :
- 800V
- Emitter Base Voltage (VEBO) :
- 7V
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 40W
- Weight :
- 2.27g
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Additional Feature :
- High Reliability
- Transistor Type :
- NPN
- Package / Case :
- TO-220-3 Full Pack
- Collector Emitter Breakdown Voltage :
- 800V
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- Radiation Hardening :
- No
- Frequency :
- 15MHz
- Collector Emitter Saturation Voltage :
- 2V
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 15MHz
- Published :
- 2003
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- JESD-609 Code :
- e3
- Datasheets
- FJPF5027RTU
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF5027RTU Overview
This device has a DC current gain of 15 @ 200mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2V @ 300mA, 1.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 15MHz.A maximum collector current of 3A volts is possible.
FJPF5027RTU Features
the DC current gain for this device is 15 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz
FJPF5027RTU Applications
There are a lot of ON Semiconductor
FJPF5027RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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