FJPF2145TU
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- Mfr.Part #
- FJPF2145TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 800V 5A TO220F-3
- Stock
- 2,619
- In Stock ：
- 2,619
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 2.27g
- Max Power Dissipation :
- 40W
- Gain Bandwidth Product :
- 15MHz
- Collector Emitter Breakdown Voltage :
- 800V
- Factory Lead Time :
- 5 Weeks
- Emitter Base Voltage (VEBO) :
- 7V
- Length :
- 10.36mm
- Power Dissipation :
- 40W
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Width :
- 4.9mm
- Number of Elements :
- 1
- Published :
- 2013
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA 5V
- Collector Base Voltage (VCBO) :
- 1.1kV
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 800V
- Package / Case :
- TO-220-3 Full Pack
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~125°C TJ
- Max Collector Current :
- 5A
- Transistor Type :
- NPN
- Gate to Source Voltage (Vgs) :
- 20V
- Transition Frequency :
- 28.4MHz
- Transistor Application :
- SWITCHING
- Case Connection :
- Isolated
- Height :
- 16.07mm
- Series :
- ESBC™
- Collector Emitter Saturation Voltage :
- 159mV
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- hFE Min :
- 20
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Datasheets
- FJPF2145TU
NPN -55°C~125°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF2145TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 200mA 5V.With a collector emitter saturation voltage of 159mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 300mA, 1.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 28.4MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
FJPF2145TU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 159mV
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
a transition frequency of 28.4MHz
FJPF2145TU Applications
There are a lot of ON Semiconductor
FJPF2145TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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