FJPF2145TU
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- Mfr.Part #
- FJPF2145TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 800V 5A TO220F-3
- Stock
- 2,619
- In Stock ：
- 2,619
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- JESD-609 Code :
- e3
- Published :
- 2013
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA 5V
- Factory Lead Time :
- 5 Weeks
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 159mV
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~125°C TJ
- Series :
- ESBC™
- Power Dissipation :
- 40W
- Pbfree Code :
- yes
- hFE Min :
- 20
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 800V
- Gain Bandwidth Product :
- 15MHz
- Package / Case :
- TO-220-3 Full Pack
- Length :
- 10.36mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.9mm
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 800V
- Collector Base Voltage (VCBO) :
- 1.1kV
- Emitter Base Voltage (VEBO) :
- 7V
- Max Power Dissipation :
- 40W
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 5A
- Number of Terminations :
- 3
- Transition Frequency :
- 28.4MHz
- Height :
- 16.07mm
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Number of Elements :
- 1
- Weight :
- 2.27g
- Element Configuration :
- Single
- Case Connection :
- Isolated
- Packaging :
- Tube
- Datasheets
- FJPF2145TU
NPN -55°C~125°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF2145TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 200mA 5V.With a collector emitter saturation voltage of 159mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 300mA, 1.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 28.4MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
FJPF2145TU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 159mV
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
a transition frequency of 28.4MHz
FJPF2145TU Applications
There are a lot of ON Semiconductor
FJPF2145TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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