FJB3307DTM
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- Mfr.Part #
- FJB3307DTM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 400V 8A D2PAK
- Stock
- 6,670
- In Stock ：
- 6,670
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 400V
- Max Power Dissipation :
- 1.72W
- JESD-30 Code :
- R-PSSO-G2
- Height :
- 4.83mm
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 400V
- Power Dissipation :
- 1.72W
- ECCN Code :
- EAR99
- Factory Lead Time :
- 6 Weeks
- Max Frequency :
- 1MHz
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 3V
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2A, 8A
- Number of Pins :
- 3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Collector Base Voltage (VCBO) :
- 700V
- Continuous Collector Current :
- 8A
- Base Part Number :
- FJB3307
- Weight :
- 1.31247g
- Transistor Element Material :
- SILICON
- Published :
- 2012
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 5A 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Length :
- 10.67mm
- Emitter Base Voltage (VEBO) :
- 9V
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 8
- Collector Emitter Breakdown Voltage :
- 400V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- REACH SVHC :
- No SVHC
- Operating Temperature :
- 150°C TJ
- Width :
- 9.65mm
- Max Collector Current :
- 8A
- Datasheets
- FJB3307DTM
NPN 150°C TJ 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
FJB3307DTM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2A, 8A.In order to achieve high efficiency, the continuous collector voltage should be kept at 8A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 8A volts at its maximum.
FJB3307DTM Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
FJB3307DTM Applications
There are a lot of ON Semiconductor
FJB3307DTM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJB3307DTM | onsemi | 6,670 | TRANS NPN 400V 8A D2PAK |
| FJB3307DTM | onsemi | 6,670 | TRANS NPN 400V 8A D2PAK |
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