FJB3307DTM
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- Mfr.Part #
- FJB3307DTM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 400V 8A D2PAK
- Stock
- 6,670
- In Stock ：
- 6,670
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PSSO-G2
- Continuous Collector Current :
- 8A
- Length :
- 10.67mm
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 8
- Pbfree Code :
- yes
- Max Frequency :
- 1MHz
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 9V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2A, 8A
- Mounting Type :
- Surface Mount
- Weight :
- 1.31247g
- Collector Emitter Saturation Voltage :
- 3V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 5A 5V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- ECCN Code :
- EAR99
- Power Dissipation :
- 1.72W
- Max Power Dissipation :
- 1.72W
- Transistor Application :
- SWITCHING
- Base Part Number :
- FJB3307
- Collector Emitter Voltage (VCEO) :
- 400V
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 400V
- Published :
- 2012
- Collector Base Voltage (VCBO) :
- 700V
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Height :
- 4.83mm
- Max Collector Current :
- 8A
- RoHS Status :
- RoHS Compliant
- Max Breakdown Voltage :
- 400V
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Factory Lead Time :
- 6 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Number of Terminations :
- 2
- Width :
- 9.65mm
- Datasheets
- FJB3307DTM
NPN 150°C TJ 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
FJB3307DTM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2A, 8A.In order to achieve high efficiency, the continuous collector voltage should be kept at 8A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 8A volts at its maximum.
FJB3307DTM Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
FJB3307DTM Applications
There are a lot of ON Semiconductor
FJB3307DTM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJB3307DTM | Fairchild Semiconductor | 6,670 | TRANS NPN 400V 8A D2PAK |
| FJB3307DTM | Fairchild Semiconductor | 6,670 | TRANS NPN 400V 8A D2PAK |
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