FJB3307DTM
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- Mfr.Part #
- FJB3307DTM
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN 400V 8A D2PAK
- Stock
- 6,670
- In Stock ：
- 6,670
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Frequency :
- 1MHz
- Pbfree Code :
- yes
- Width :
- 9.65mm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Emitter Base Voltage (VEBO) :
- 9V
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 5A 5V
- Terminal Form :
- Gull wing
- Height :
- 4.83mm
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2A, 8A
- Power Dissipation :
- 1.72W
- Number of Terminations :
- 2
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Weight :
- 1.31247g
- Collector Base Voltage (VCBO) :
- 700V
- Continuous Collector Current :
- 8A
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Length :
- 10.67mm
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1.72W
- Collector Emitter Breakdown Voltage :
- 400V
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 400V
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Element Configuration :
- Single
- hFE Min :
- 8
- Collector Emitter Voltage (VCEO) :
- 400V
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 3V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Max Collector Current :
- 8A
- Published :
- 2012
- Factory Lead Time :
- 6 Weeks
- Base Part Number :
- FJB3307
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FJB3307DTM
NPN 150°C TJ 1 Elements 2 Terminations SILICON NPN TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
FJB3307DTM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5 @ 5A 5V.With a collector emitter saturation voltage of 3V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2A, 8A.In order to achieve high efficiency, the continuous collector voltage should be kept at 8A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.There is a breakdown input voltage of 400V volts that it can take.Collector current can be as low as 8A volts at its maximum.
FJB3307DTM Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
FJB3307DTM Applications
There are a lot of ON Semiconductor
FJB3307DTM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJB3307DTM | onsemi | 6,670 | TRANS NPN 400V 8A D2PAK |
| FJB3307DTM | onsemi | 6,670 | TRANS NPN 400V 8A D2PAK |
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