FGD3N60UNDF

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Number of Pins :

3

Vce(on) (Max) @ Vge, Ic :

2.52V @ 15V, 3A

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Turn On Time :

7.4 ns

Max Power Dissipation :

60W

Collector Emitter Breakdown Voltage :

600V

Input Type :

Standard

Polarity/Channel Type :

N-Channel

Collector Emitter Saturation Voltage :

2.4V

Test Condition :

400V, 3A, 10 Ω, 15V

IGBT Type :

NPT

Gate-Emitter Thr Voltage-Max :

8.5V

JESD-609 Code :

e3

Weight :

260.37mg

Width :

6.1mm

Td (on/off) @ 25°C :

5.5ns/22ns

RoHS Status :

ROHS3 Compliant

Gate Charge :

1.6nC

Element Configuration :

Single

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Power Dissipation :

60W

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Current - Collector Pulsed (Icm) :

9A

Transistor Application :

Motor Control

Mount :

Surface Mount

Max Breakdown Voltage :

600V

Height :

2.3mm

Reverse Recovery Time :

21ns

Radiation Hardening :

No

HTS Code :

8541.29.00.95

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

FGD3N60

Packaging :

Cut Tape (CT)

Terminal Form :

Gull wing

Max Collector Current :

6A

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Factory Lead Time :

7 Weeks

Gate-Emitter Voltage-Max :

20V

Turn Off Time-Nom (toff) :

146 ns

Pbfree Code :

yes

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

600V

Length :

6.6mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Switching Energy :

52μJ (on), 30μJ (off)