FF200R12KE4HOSA1

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Mfr.Part #
FF200R12KE4HOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 240A 1100W
Stock
15
In Stock :
15

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Lead Free :
Lead Free
Turn On Time :
325 ns
Configuration :
Half Bridge
Surface Mount :
No
Current - Collector Cutoff (Max) :
5mA
Number of Terminations :
5
Power - Max :
1100W
Package / Case :
Module
Input Capacitance (Cies) @ Vce :
14nF @ 25V
ECCN Code :
EAR99
Number of Pins :
7
Polarity :
NPN
IGBT Type :
Trench Field Stop
Vce(on) (Max) @ Vge, Ic :
2.15V @ 15V, 200A
Pbfree Code :
yes
Published :
2002
JESD-30 Code :
R-XUFM-X5
Input :
Standard
Series :
C
NTC Thermistor :
No
Pin Count :
7
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Collector Emitter Breakdown (Max) :
1200V
Mounting Type :
Chassis Mount
Terminal Position :
UPPER
Operating Temperature :
-40°C~150°C TJ
Element Configuration :
Dual
Factory Lead Time :
14 Weeks
Halogen Free :
Not Halogen Free
Turn Off Time-Nom (toff) :
800 ns
RoHS Status :
ROHS3 Compliant
Current - Collector (Ic) (Max) :
240A
Case Connection :
Isolated
Number of Elements :
2
Datasheets
FF200R12KE4HOSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FF200R12KE4HOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Package / Case:Module, Number of Pins:7, Mounting Type:Chassis Mount, Operating Temperature:-40°C~150°C TJ, FF200R12KE4HOSA1 pinout, FF200R12KE4HOSA1 datasheet PDF, FF200R12KE4HOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FF200R12KE4HOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FF200R12KE4HOSA1


FF200R12KE4HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FF200R12KE4HOSA1 Description


FF200R12KE4HOSA1 is a 600v IGBT module. The FF200R12KE4HOSA1 can be applied in  Automotive, Hybrid, electric & powertrain systems, Communications equipment, Datacom module, Enterprise systems, and Enterprise machine applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FF200R12KE4HOSA1 is in the tray package with 1100W Power dissipations.



FF200R12KE4HOSA1 Features


Collector-emitter voltage Tvj = 25°C: 600v

Continuous DC collector current TC = 25°C : 25A

Repetitive peak collector current Tp = 1 ms: 40A

Total power dissipation Tc = 25°C: 89W

Gate-emitter peak voltage: ±20V



FF200R12KE4HOSA1 Applications


Automotive 

Hybrid, electric & powertrain systems 

Communications equipment 

Datacom module 

Enterprise systems 

Enterprise machine 


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