FF200R12KE3B2HOSA1
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- Mfr.Part #
- FF200R12KE3B2HOSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MOD 1200V 295A 1050W
- Stock
- 29,830
- In Stock ：
- 29,830
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Configuration :
- Half Bridge
- Vce(on) (Max) @ Vge, Ic :
- 2.15V @ 15V, 200A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- NTC Thermistor :
- No
- Mounting Type :
- Chassis Mount
- Input Capacitance (Cies) @ Vce :
- 14nF @ 25V
- Current - Collector (Ic) (Max) :
- 295A
- Power - Max :
- 1050W
- Factory Lead Time :
- 14 Weeks
- Input :
- Standard
- Operating Temperature :
- -40°C~125°C
- Current - Collector Cutoff (Max) :
- 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- Module
- Datasheets
- FF200R12KE3B2HOSA1
FF200R12KE3B2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FF200R12KE3B2HOSA1 Description
FF200R12KE3B2HOSA1 is a 1200v IGBT-modules. The FF200R12KE3B2HOSA1 can be applied in Automotive, Hybrid, electric & powertrain systems, Enterprise systems, Enterprise projectors, Personal electronics, and Home theater & entertainment applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FF200R12KE3B2HOSA1 is in the tray package with 1050W Power dissipation.
FF200R12KE3B2HOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 295A
Repetitive peak collector current Tp = 1 ms: 400A
Total power dissipation Tc = 25°C: 1050W
Gate-emitter peak voltage: ±20V
FF200R12KE3B2HOSA1 Applications
Automotive
Hybrid, electric & powertrain systems
Enterprise systems
Enterprise projectors
Personal electronics
Home theater & entertainment
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