FDZ193P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

BOTTOM

Number of Terminations :

6

Rise Time :

10ns

JESD-609 Code :

e1

Vgs (Max) :

±12V

Power Dissipation :

1.5W

Pbfree Code :

yes

Number of Elements :

1

Terminal Form :

Ball

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-20V

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

3A

Continuous Drain Current (ID) :

-3A

Turn-Off Delay Time :

28 ns

Package / Case :

6-UFBGA, WLCSP

Number of Pins :

6

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Weight :

54mg

Height :

650μm

Width :

1.5mm

Fall Time (Typ) :

10 ns

FET Type :

P-Channel

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

-900mV

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Transistor Element Material :

SILICON

Nominal Vgs :

-900 mV

Lead Free :

Lead Free

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Resistance :

90mOhm

Drive Voltage (Max Rds On,Min Rds On) :

1.7V 4.5V

Power Dissipation-Max :

1.9W Ta

Series :

PowerTrench®

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 10V

Rds On (Max) @ Id, Vgs :

90m Ω @ 1A, 4.5V

Mount :

Surface Mount

Factory Lead Time :

10 Weeks

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Length :

1mm

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)

Published :

2016

Drain to Source Voltage (Vdss) :

20V

Turn On Delay Time :

13 ns

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Radiation Hardening :

No