FDZ191P
- Mfr.Part #
- FDZ191P
- Manufacturer
- onsemi
- Package / Case
- 6-UFBGA, WLCSP
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3A 6WLCSP
- Stock
- 23,946
- In Stock :
- 23,946
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Series :
- PowerTrench®
- Rise Time :
- 10ns
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -20V
- Weight :
- 54mg
- Published :
- 2009
- Drain to Source Voltage (Vdss) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 800pF @ 10V
- Power Dissipation :
- 1.5W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation-Max :
- 1.9W Ta
- Width :
- 1mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Element Configuration :
- Single
- Contact Plating :
- Copper, Silver, Tin
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 600mV
- Turn-Off Delay Time :
- 50 ns
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Length :
- 1.5mm
- Current Rating :
- -3A
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 10 Weeks
- Fall Time (Typ) :
- 10 ns
- Number of Terminations :
- 6
- Drain to Source Breakdown Voltage :
- -20V
- JESD-609 Code :
- e1
- Number of Pins :
- 6
- Continuous Drain Current (ID) :
- -3A
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 11 ns
- FET Type :
- P-Channel
- Terminal Form :
- Ball
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain Current-Max (Abs) (ID) :
- 3A
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Gate to Source Voltage (Vgs) :
- 8V
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 1A, 4.5V
- Height :
- 370μm
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Package / Case :
- 6-UFBGA, WLCSP
- Resistance :
- 85mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Vgs (Max) :
- ±8V
- Datasheets
- FDZ191P

P-Channel Tape & Reel (TR) 85m Ω @ 1A, 4.5V ±8V 800pF @ 10V 13nC @ 10V 20V 6-UFBGA, WLCSP
The ON FDZ191P P-Channel MOSFET is designed on an innovative 1.5V PowerTrench process with state-of-the-art "low pitch" WLCSP packaging method, reducing PCB area and rDS (on). This sophisticated WLCSP MOSFET incorporates a packaging innovation, allowing the device to combine superior thermal transfer properties, ultra-low profile packing, low gate charge, and low rDS(on).
FDZ191P Features
Occupies only 1.5 mm2 of PCB area Less than 50% of the area of 2 x 2 BGA
Ultra-thin package: less than 0.65 mm height when mounted to PCB
RoHS Compliant
Max rDS(on) = 85mΩ at VGS = -4.5V, ID = -1A
Max rDS(on) = 123mΩ at VGS = -2.5V, ID = -1A
Max rDS(on) = 200mΩ at VGS = -1.5V, ID = -1A
FDZ191P Applications
Load Switch
Load Switch
Battery Protection
Battery Management
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