FDY2000PZ

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

8V

Drain Current-Max (Abs) (ID) :

0.35A

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 350mA, 4.5V

Factory Lead Time :

10 Weeks

Width :

1.2mm

Threshold Voltage :

-1.03V

Height :

600μm

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Weight :

32mg

Rise Time :

13ns

Package / Case :

SOT-563, SOT-666

Number of Elements :

2

Fall Time (Typ) :

13 ns

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V

Number of Terminations :

6

JESD-609 Code :

e3

Terminal Form :

Flat

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Series :

PowerTrench®

Number of Pins :

6

FET Type :

2 P-Channel (Dual)

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

350mA

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 10V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Published :

2006

Drain to Source Breakdown Voltage :

-20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

630mW

Length :

1.7mm

Turn On Delay Time :

6 ns

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

625mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

ECCN Code :

EAR99

Lead Free :

Lead Free

Power - Max :

446mW

Turn-Off Delay Time :

8 ns