FDW258P
- Mfr.Part #
- FDW258P
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 9A 8TSSOP
- Stock
- 72,326
- In Stock :
- 72,326
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- DS Breakdown Voltage-Min :
- 12V
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 73nC @ 4.5V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 9A, 4.5V
- Terminal Position :
- Dual
- Input Capacitance (Ciss) (Max) @ Vds :
- 5.049pF @ 5V
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 1.3W Ta
- Number of Terminations :
- 8
- Surface Mount :
- yes
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Transistor Application :
- SWITCHING
- FET Type :
- P-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- COMMERCIAL
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 9A
- Pin Count :
- 8
- JESD-30 Code :
- R-PDSO-G8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.011Ohm
- Terminal Finish :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±8V
- Drain to Source Voltage (Vdss) :
- 12V
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta
- Series :
- PowerTrench®
- Datasheets
- FDW258P

P-Channel Tape & Reel (TR) 11m Ω @ 9A, 4.5V ±8V 5.049pF @ 5V 73nC @ 4.5V 12V 8-TSSOP (0.173, 4.40mm Width)
FDW258P Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5.049pF @ 5V.There is no drain current on this device since the maximum continuous current it can conduct is 9A.In order for DS breakdown voltage to remain above 12V, it should remain above the 12V level.The transistor must receive a 12V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
FDW258P Features
a 12V drain to source voltage (Vdss)
FDW258P Applications
There are a lot of Rochester Electronics, LLC
FDW258P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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