FDV302P

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

350mW

Mount :

Surface Mount

Number of Elements :

1

Terminal Position :

Dual

Length :

2.92mm

FET Type :

P-Channel

Threshold Voltage :

-1V

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 16 hours ago)

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Rds On (Max) @ Id, Vgs :

10 Ω @ 200mA, 4.5V

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

11pF @ 10V

Drain to Source Voltage (Vdss) :

25V

Contact Plating :

Tin

REACH SVHC :

No SVHC

Voltage - Rated DC :

-25V

JESD-609 Code :

e3

Turn-Off Delay Time :

9 ns

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

8 ns

Transistor Application :

SWITCHING

Weight :

30mg

Max Junction Temperature (Tj) :

150°C

Pbfree Code :

yes

Dual Supply Voltage :

-25V

Lead Free :

Lead Free

Current Rating :

-120mA

Gate Charge (Qg) (Max) @ Vgs :

0.31nC @ 4.5V

Rise Time :

8ns

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Turn On Delay Time :

5 ns

Gate to Source Voltage (Vgs) :

-8V

Nominal Vgs :

-1 V

Published :

1997

Additional Feature :

LOGIC LEVEL COMPATIBLE

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Resistance :

13Ohm

Vgs (Max) :

±8V

Continuous Drain Current (ID) :

120mA

Number of Terminations :

3

Power Dissipation-Max :

350mW Ta

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-25V

Height :

1.11mm

Terminal Form :

Gull wing

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Width :

1.3mm

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Element Configuration :

Single

Factory Lead Time :

10 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3