FDV302P

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Mfr.Part #
FDV302P
Manufacturer
Fairchild Semiconductor
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Stock
47,478
In Stock :
47,478

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
8 ns
Mount :
Surface Mount
ECCN Code :
EAR99
Turn-Off Delay Time :
9 ns
Width :
1.3mm
Power Dissipation-Max :
350mW Ta
Transistor Element Material :
SILICON
Number of Pins :
3
Turn On Delay Time :
5 ns
Published :
1997
Rds On (Max) @ Id, Vgs :
10 Ω @ 200mA, 4.5V
Resistance :
13Ohm
Max Junction Temperature (Tj) :
150°C
Packaging :
Tape and Reel (TR)
Number of Channels :
1
Number of Terminations :
3
Continuous Drain Current (ID) :
120mA
Vgs (Max) :
±8V
Element Configuration :
Single
Drain to Source Breakdown Voltage :
-25V
Contact Plating :
Tin
Pbfree Code :
yes
Weight :
30mg
FET Type :
P-Channel
Height :
1.11mm
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Threshold Voltage :
-1V
JESD-609 Code :
e3
Dual Supply Voltage :
-25V
Mounting Type :
Surface Mount
Lead Free :
Lead Free
Radiation Hardening :
No
Voltage - Rated DC :
-25V
Power Dissipation :
350mW
Current - Continuous Drain (Id) @ 25°C :
120mA Ta
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Dual
Gate to Source Voltage (Vgs) :
-8V
Additional Feature :
LOGIC LEVEL COMPATIBLE
Terminal Form :
Gull wing
Input Capacitance (Ciss) (Max) @ Vds :
11pF @ 10V
Gate Charge (Qg) (Max) @ Vgs :
0.31nC @ 4.5V
Current Rating :
-120mA
Package / Case :
TO-236-3, SC-59, SOT-23-3
Operating Mode :
ENHANCEMENT MODE
Rise Time :
8ns
Drain to Source Voltage (Vdss) :
25V
Length :
2.92mm
Transistor Application :
SWITCHING
Number of Elements :
1
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Nominal Vgs :
-1 V
Lifecycle Status :
ACTIVE (Last Updated: 16 hours ago)
Drive Voltage (Max Rds On,Min Rds On) :
2.7V 4.5V
Factory Lead Time :
10 Weeks
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDV302P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1, Number of Terminations:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, FDV302P pinout, FDV302P datasheet PDF, FDV302P amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDV302P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



P-Channel Tape & Reel (TR) 10 Ω @ 200mA, 4.5V ±8V 11pF @ 10V 0.31nC @ 4.5V 25V TO-236-3, SC-59, SOT-23-3

FDV302P Description


Our exclusive high cell density DMOS technology is used to make the FDV302P transistor. This extremely dense technique is specifically designed to reduce on-state resistance. This device was created specifically to replace digital transistors in low-voltage applications. This single P-channel FET can replace numerous digital transistors with various bias resistors, such as the DTCx and DCDx series, because bias resistors are not required.



FDV302P Features


  • Gate drive needs are very minimal, allowing direct operation in 3V circuits. VGS(th) < 1.5V.

  • For ESD toughness, use a Gate-Source Zener.

  • Human Body Model >6kV

  • SOT-23 surface mount package is a compact industry standard.

  • One DMOS FET can replace multiple PNP digital transistors (DTCx and DCDx).



FDV302P Applications


FDV302P is intended for general use and can be used in a variety of situations.


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