FDV301N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

25V

Rise Time :

6ns

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

Vgs(th) (Max) @ Id :

1.06V @ 250μA

Continuous Drain Current (ID) :

220mA

Drain to Source Breakdown Voltage :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1999

Power Dissipation :

350mW

Terminal Position :

Dual

Terminal Form :

Gull wing

Additional Feature :

LOGIC LEVEL COMPATIBLE

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Contact Plating :

Tin

Turn-Off Delay Time :

3.5 ns

Mounting Type :

Surface Mount

Power Dissipation-Max :

350mW Ta

Resistance :

4Ohm

Number of Channels :

1

Number of Terminations :

3

Vgs (Max) :

±8V

Current Rating :

220mA

REACH SVHC :

No SVHC

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

0.7nC @ 4.5V

Current :

2A

Gate to Source Voltage (Vgs) :

8V

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Dual Supply Voltage :

25V

Element Configuration :

Single

Length :

2.92mm

Max Junction Temperature (Tj) :

150°C

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

220mA Ta

Manufacturer Package Identifier :

SOT−23 (TO−236) CASE 318−08 ISSUE AR

Width :

3.05mm

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Nominal Vgs :

850 mV

Package / Case :

TO-236-3, SC-59, SOT-23-3

Factory Lead Time :

10 Weeks

Rds On (Max) @ Id, Vgs :

4 Ω @ 400mA, 4.5V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

6 ns

Voltage :

50V

Pbfree Code :

yes

Height :

1.11mm

Radiation Hardening :

No

Termination :

SMD/SMT

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Turn On Delay Time :

3.2 ns