FDT3612

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

3W

Turn-Off Delay Time :

23 ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-G4

Radiation Hardening :

No

Current Rating :

3.7A

Pulsed Drain Current-Max (IDM) :

20A

Nominal Vgs :

2.5 V

Max Junction Temperature (Tj) :

150°C

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Series :

PowerTrench®

Transistor Application :

SWITCHING

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

3W Ta

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Threshold Voltage :

2.5V

Continuous Drain Current (ID) :

3.7A

JESD-609 Code :

e3

Resistance :

120mOhm

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

REACH SVHC :

No SVHC

Voltage - Rated DC :

100V

Number of Channels :

1

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Case Connection :

DRAIN

Mount :

Surface Mount

Number of Elements :

1

Terminal Form :

Gull wing

Lead Free :

Lead Free

Number of Terminations :

4

Fall Time (Typ) :

4.5 ns

FET Type :

N-Channel

Weight :

250.2mg

Rds On (Max) @ Id, Vgs :

120m Ω @ 3.7A, 10V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

6.5mm

Rise Time :

2ns

Avalanche Energy Rating (Eas) :

90 mJ

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

632pF @ 50V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Height :

1.8mm

Factory Lead Time :

8 Weeks

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

Package / Case :

TO-261-4, TO-261AA

Width :

3.56mm

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

100V

Turn On Delay Time :

8.5 ns