FDT3612
- Mfr.Part #
- FDT3612
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 3
- Stock
- 65,798
- In Stock :
- 65,798
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 3.7A
- Width :
- 3.56mm
- Power Dissipation-Max :
- 3W Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Pulsed Drain Current-Max (IDM) :
- 20A
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 3.7A Ta
- Number of Elements :
- 1
- Power Dissipation :
- 3W
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.5mm
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 3.7A, 10V
- Terminal Position :
- Dual
- Current Rating :
- 3.7A
- Voltage - Rated DC :
- 100V
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1.8mm
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Package / Case :
- TO-261-4, TO-261AA
- JESD-30 Code :
- R-PDSO-G4
- Weight :
- 250.2mg
- Nominal Vgs :
- 2.5 V
- Rise Time :
- 2ns
- Turn-Off Delay Time :
- 23 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 632pF @ 50V
- Resistance :
- 120mOhm
- Packaging :
- Tape and Reel (TR)
- Threshold Voltage :
- 2.5V
- Max Junction Temperature (Tj) :
- 150°C
- Number of Channels :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Factory Lead Time :
- 8 Weeks
- Series :
- PowerTrench®
- Contact Plating :
- Tin
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 8.5 ns
- ECCN Code :
- EAR99
- Number of Terminations :
- 4
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 4.5 ns
- Transistor Element Material :
- SILICON
- Datasheets
- FDT3612

N-Channel Tape & Reel (TR) 120m Ω @ 3.7A, 10V ±20V 632pF @ 50V 20nC @ 10V TO-261-4, TO-261AA
FDT3612 Description
With either synchronous or traditional switching PWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters.
Compared to other MOSFETs with comparable RDS(ON) parameters, these MOSFETs switch more quickly and have a lower gate charge. The end result is a MOSFET that is simple to control and safe to do so (even at extremely high frequencies), as well as DC/DC power supply designs that are more efficient all around.
FDT3612 Features
-
Fast switching speed
-
Low gate charge (14nC typ)
-
High performance trench technology for extremely low RDS(ON)
-
High power and current handling capability in a widely used surface mount package
FDT3612 Applications
-
DC/DC converter
-
Motor driving
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