FDS5690
- Mfr.Part #
- FDS5690
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7A 8SOIC
- Stock
- 34,266
- In Stock :
- 34,266
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1107pF @ 30V
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Weight :
- 130mg
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drain to Source Breakdown Voltage :
- 60V
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 8
- Power Dissipation-Max :
- 2.5W Ta
- Terminal Position :
- Dual
- Factory Lead Time :
- 9 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 7A
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 7A, 10V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Element Configuration :
- Single
- Rise Time :
- 9ns
- Width :
- 4mm
- Turn-Off Delay Time :
- 24 ns
- Length :
- 5mm
- Resistance :
- 28mOhm
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta
- Pbfree Code :
- yes
- Turn On Delay Time :
- 10 ns
- Voltage - Rated DC :
- 60V
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 2.5W
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Continuous Drain Current (ID) :
- 7A
- Current Rating :
- 7A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Pins :
- 8
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1.5mm
- Radiation Hardening :
- No
- Series :
- PowerTrench®
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 10 ns
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FDS5690
FDS5690 Documents

N-Channel Tape & Reel (TR) 28m Ω @ 7A, 10V ±20V 1107pF @ 30V 32nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS5690 Description
The FDS5690 N-channel MOSFET is made with ON Semiconductor's innovative PowerTrench technology, which is specifically designed to reduce on-state resistance while maintaining exceptional switching performance. It is ideal for low-voltage and battery-powered applications that demand low in-line power loss and quick switching, according to FDS5690 datasheet.
FDS5690 Features
-
Fast switching speed.
-
Low gate charge (23nC typical).
-
High power and current handling capability
-
High-performance trench technology for extremely low RDS(ON).
-
7 A, 60 V. RDS(on) = 0.028 ? @ VGS = 10 V RDS(on) = 0.033 ? @ VGS = 6 V.
FDS5690 Applications
-
Motor drives
-
DC/DC converter
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