FDS5670

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Mfr.Part #
FDS5670
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 60V 10A 8SOIC
Stock
9,083
In Stock :
9,083

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Current :
10A
Rise Time :
10ns
ECCN Code :
EAR99
Power Dissipation-Max :
2.5W Ta
Number of Pins :
8
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
10A
Operating Mode :
ENHANCEMENT MODE
Threshold Voltage :
2.4V
Gate to Source Voltage (Vgs) :
20V
Voltage - Rated DC :
60V
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Radiation Hardening :
No
Nominal Vgs :
2.4 V
REACH SVHC :
No SVHC
Turn On Delay Time :
16 ns
Current - Continuous Drain (Id) @ 25°C :
10A Ta
Terminal Position :
Dual
Height :
1.5mm
Transistor Element Material :
SILICON
Length :
5mm
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Terminal Form :
Gull wing
Series :
PowerTrench®
Voltage :
60V
Resistance :
14mOhm
Vgs(th) (Max) @ Id :
4V @ 250µA
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Vgs (Max) :
±20V
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Turn-Off Delay Time :
50 ns
Number of Terminations :
8
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
23 ns
Dual Supply Voltage :
60V
Input Capacitance (Ciss) (Max) @ Vds :
2900pF @ 15V
Lead Free :
Lead Free
Power Dissipation :
2.5W
Configuration :
SINGLE WITH BUILT-IN DIODE
Width :
4mm
JESD-609 Code :
e3
FET Type :
N-Channel
Published :
1999
Drain to Source Breakdown Voltage :
60V
Current Rating :
10A
Pbfree Code :
yes
Contact Plating :
Tin
Rds On (Max) @ Id, Vgs :
14m Ω @ 10A, 10V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time :
10 Weeks
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS5670 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:8, Voltage:60V, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Terminations:8, Operating Temperature:-55°C~150°C TJ, FDS5670 pinout, FDS5670 datasheet PDF, FDS5670 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS5670 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS5670


N-Channel Tape & Reel (TR) 14m Ω @ 10A, 10V ±20V 2900pF @ 15V 70nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS5670 Description


The FDS5670 is an N-channel MOSFET produced using PowerTrench? process. The  FDS5670 is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.



FDS5670 Features


  • 10 A, 60 V

  • RDS(ON) = 0.014 Ω @ VGS = 10 V

  • RDS(ON) = 0.017 Ω @ VGS = 6 V

  • Low gate charge

  • Fast switching speed

  • High performance trench technology for extremely low RDS(ON)

  • High power and current handling capability



FDS5670 Applications


  • Synchronous Rectifier for DC/DC Converters

  • Notebook Vcore/ GPU low side switch

  • Networking Point of Load low side switch

  • Telecom secondary side rectification


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