FDS5670

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Series :

PowerTrench®

Transistor Application :

SWITCHING

Width :

4mm

Length :

5mm

Drain to Source Breakdown Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

10ns

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Height :

1.5mm

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Current Rating :

10A

Threshold Voltage :

2.4V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Turn-Off Delay Time :

50 ns

Number of Pins :

8

Lead Free :

Lead Free

Terminal Position :

Dual

Turn On Delay Time :

16 ns

Number of Elements :

1

Continuous Drain Current (ID) :

10A

Power Dissipation-Max :

2.5W Ta

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

14m Ω @ 10A, 10V

Published :

1999

Nominal Vgs :

2.4 V

Current :

10A

Number of Terminations :

8

Fall Time (Typ) :

23 ns

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Power Dissipation :

2.5W

Mount :

Surface Mount

Vgs (Max) :

±20V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

Voltage - Rated DC :

60V

Resistance :

14mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Gate to Source Voltage (Vgs) :

20V

Voltage :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

10 Weeks

Dual Supply Voltage :

60V