FDS4685

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Mfr.Part #
FDS4685
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 40V 8.2A 8SOIC
Stock
30,345
In Stock :
30,345

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 5V
Continuous Drain Current (ID) :
8.2mA
RoHS Status :
ROHS3 Compliant
Height :
1.5mm
Number of Pins :
8
Gate to Source Voltage (Vgs) :
20V
Threshold Voltage :
-1.6V
Element Configuration :
Single
Series :
PowerTrench®
Nominal Vgs :
-1.6 V
REACH SVHC :
No SVHC
Turn-Off Delay Time :
50 ns
Turn On Delay Time :
14 ns
Contact Plating :
Tin
FET Type :
P-Channel
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Length :
5mm
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Weight :
130mg
Width :
4mm
Input Capacitance (Ciss) (Max) @ Vds :
1872pF @ 20V
JESD-609 Code :
e4
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Resistance :
27mOhm
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Voltage - Rated DC :
-40V
Terminal Position :
Dual
Lead Free :
Lead Free
Power Dissipation :
2.5W
Radiation Hardening :
No
Transistor Element Material :
SILICON
Drain to Source Voltage (Vdss) :
40V
Rds On (Max) @ Id, Vgs :
27m Ω @ 8.2A, 10V
Factory Lead Time :
18 Weeks
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Drain to Source Breakdown Voltage :
-40V
Vgs (Max) :
±20V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Mount :
Surface Mount
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Fall Time (Typ) :
18 ns
Published :
2005
Power Dissipation-Max :
2.5W Ta
Rise Time :
11ns
Vgs(th) (Max) @ Id :
3V @ 250µA
Number of Terminations :
8
Current - Continuous Drain (Id) @ 25°C :
8.2A Ta
Current Rating :
-8.2A
Mounting Type :
Surface Mount
Number of Elements :
1
Datasheets
FDS4685
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS4685 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, Number of Terminations:8, Mounting Type:Surface Mount, FDS4685 pinout, FDS4685 datasheet PDF, FDS4685 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS4685 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS4685


P-Channel Tape & Reel (TR) 27m Ω @ 8.2A, 10V ±20V 1872pF @ 20V 27nC @ 5V 40V 8-SOIC (0.154, 3.90mm Width)

FDS4685 Description

FDS4685 P-Channel MOSFET is a rugged gate version of an advanced PowerTrench process. FDS4685 has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).


FDS4685 Features

  • -8.2A, -40V

  • RDS(ON) = 0.027 mΩ @ VGS = -10V

  • RDS(ON) = 0.035 mΩ @ VGS = -4.5V

  • Fast switching speed

  • High-performance trench technology for extremely low RDS(ON)

  • High power and current handling capability


FDS4685 Applications

  • Power management

  • Load switch

  • Battery protection


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