FDS4470
- Mfr.Part #
- FDS4470
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 17,140
- In Stock :
- 17,140
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 12.5A Ta
- Current Rating :
- 12.5A
- Power Dissipation :
- 2.5W
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Pulsed Drain Current-Max (IDM) :
- 50A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2659pF @ 20V
- Continuous Drain Current (ID) :
- 12.5A
- Number of Terminations :
- 8
- Height :
- 1.5mm
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- JESD-609 Code :
- e4
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 12.5A, 10V
- Threshold Voltage :
- 3.9V
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 2.5W Ta
- Fall Time (Typ) :
- 29 ns
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 9 Weeks
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 40V
- Turn-Off Delay Time :
- 37 ns
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 40V
- Series :
- PowerTrench®
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Width :
- 4mm
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Resistance :
- 9mOhm
- Number of Pins :
- 8
- Weight :
- 130mg
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Length :
- 5mm
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Avalanche Energy Rating (Eas) :
- 370 mJ
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 14 ns
- Rise Time :
- 12ns
- Vgs (Max) :
- +30V, -20V
- Datasheets
- FDS4470

N-Channel Tape & Reel (TR) 9m Ω @ 12.5A, 10V +30V, -20V 2659pF @ 20V 63nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS4470 Description
The FDS4470 is an N-channel MOSFET produced using the PowerTrench? process. The onsemi FDS4470 is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. The FDS4470 has been optimized for low gate charge, low RDS (ON), and fast switching speed. The FDS4470 is offered in the SOIC-8 package. It is specified for operation from -55°C to +175°C.
FDS4470 Features
-
12.5 A, 40 V. RDS(ON) = 9 mΩ @ VGS = 10 V
-
Low gate charge (45 nC)
-
High-performance trench technology for extremely low RDS(ON)
-
High power and current handling capability
-
In the SOIC-8 package
FDS4470 Applications
-
cellular phones and laptop computers,
-
high-efficiency LED power sources
-
photovoltaic systems
-
wind turbines
-
switched-mode power supply
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