FDS4465
- Mfr.Part #
- FDS4465
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 13.5A 8SOIC
- Stock
- 144,553
- In Stock :
- 144,553
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 300 ns
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Ta
- Pulsed Drain Current-Max (IDM) :
- 50A
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Power Dissipation-Max :
- 2.5W Ta
- Threshold Voltage :
- -600mV
- Rise Time :
- 24ns
- FET Type :
- P-Channel
- Number of Terminations :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 4.5V
- Element Configuration :
- Single
- Number of Pins :
- 8
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Max Junction Temperature (Tj) :
- 175°C
- Weight :
- 130mg
- Length :
- 5mm
- Continuous Drain Current (ID) :
- 13.5A
- Factory Lead Time :
- 18 Weeks
- Transistor Element Material :
- SILICON
- Width :
- 4mm
- Dual Supply Voltage :
- -20V
- Published :
- 2003
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 13.5A, 4.5V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Radiation Hardening :
- No
- Turn On Delay Time :
- 20 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 8237pF @ 10V
- Fall Time (Typ) :
- 140 ns
- Power Dissipation :
- 2.5W
- Resistance :
- 8.5mOhm
- Drain to Source Voltage (Vdss) :
- 20V
- Series :
- PowerTrench®
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- -20V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- -20V
- Current Rating :
- -13.5A
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 8V
- Height :
- 1.75mm
- Termination :
- SMD/SMT
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Vgs (Max) :
- ±8V
- JESD-609 Code :
- e4
- Nominal Vgs :
- -600 mV
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FDS4465

P-Channel Tape & Reel (TR) 8.5m Ω @ 13.5A, 4.5V ±8V 8237pF @ 10V 120nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
FDS4465 Description
FDS4465 is a type of P-channel PowerTrench? MOSFET that is manufactured by ON Semiconductor based on the high-performance trench technology for extremely low RDS (on). It features a low gate charge, fast switching speed, as well as high current and power handling capability. Power MOSFET FDS4465 is primarily designed for power management applications with a wide range of gate drive voltage (1.8 V – 8 V).
FDS4465 Features
-
Low RDS (on)
-
Low gate charge
-
Fast switching speed
-
Available in the SOIC8 package
-
High power and current handling capability
FDS4465 Applications
-
Power management applications
-
NVTFS4823NTAG Description
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