FDS4435BZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Threshold Voltage :

-2.1V

Length :

5mm

Rise Time :

13ns

Mounting Type :

Surface Mount

Weight :

130mg

Feedback Cap-Max (Crss) :

345 pF

FET Type :

P-Channel

Series :

PowerTrench®

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

25V

JESD-609 Code :

e3

Published :

2009

Drain to Source Voltage (Vdss) :

30V

REACH SVHC :

No SVHC

Vgs (Max) :

±25V

Turn-Off Delay Time :

30 ns

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

18 Weeks

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1845pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Lead Free :

Lead Free

Number of Terminations :

8

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Resistance :

20mOhm

Fall Time (Typ) :

38 ns

Height :

1.75mm

Current Rating :

-8.8A

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

20m Ω @ 8.8A, 10V

Power Dissipation :

2.5W

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta

Continuous Drain Current (ID) :

-8.8A

Number of Channels :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

-30V

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn On Delay Time :

10 ns

Voltage - Rated DC :

-30V

Number of Pins :

8

Radiation Hardening :

No

Power Dissipation-Max :

2.5W Ta

Width :

4mm

Contact Plating :

Tin

Nominal Vgs :

-2.1 V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Element Configuration :

Single

Max Junction Temperature (Tj) :

150°C