FDP39N20
- Mfr.Part #
- FDP39N20
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 3
- Stock
- 500
- In Stock :
- 500
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Additional Feature :
- FAST SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.066Ohm
- Rds On (Max) @ Id, Vgs :
- 66m Ω @ 19.5A, 10V
- Weight :
- 1.8g
- Input Capacitance (Ciss) (Max) @ Vds :
- 2130pF @ 25V
- Continuous Drain Current (ID) :
- 39A
- Current - Continuous Drain (Id) @ 25°C :
- 39A Tc
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 150 ns
- Fall Time (Typ) :
- 150 ns
- Drain to Source Breakdown Voltage :
- 200V
- Rise Time :
- 160ns
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Type :
- Through Hole
- Power Dissipation :
- 251W
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 30 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 251W Tc
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 860 mJ
- Terminal Finish :
- Tin (Sn)
- Series :
- UniFET™
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FDP39N20

N-Channel Tube 66m Ω @ 19.5A, 10V ±30V 2130pF @ 25V 49nC @ 10V TO-220-3
FDP39N20 Description
A high voltage MOSFET family called UniFETTM MOSFET is based on DMOS and planar stripe technology. The FDP39N20 MOSFET is designed to offer superior switching performance, increased avalanche energy strength, and reduced on-state resistance. Switching power converter applications such power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts are appropriate for the FDP39N20.
FDP39N20 Features
-
Low Crss (Typ. 57 pF)
-
100% Avalanche Tested
-
Low Gate Charge (Typ. 38 nC)
-
RDS(on) = 66 mΩ (Max.) @ VGS = 10 V, ID = 19.5 A
FDP39N20 Applications
-
PDP TV
-
Lighting
-
AC-DC Power Supplies
-
Uninterruptible Power Supplies
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