FDP33N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

235W

Drain to Source Breakdown Voltage :

250V

Rise Time :

230ns

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Length :

10.67mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

33A

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Voltage - Rated DC :

250V

Fall Time (Typ) :

120 ns

Turn-Off Delay Time :

75 ns

JEDEC-95 Code :

TO-220AB

Series :

UniFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

5V

Height :

9.4mm

Published :

2004

Current Rating :

33A

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

94m Ω @ 16.5A, 10V

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Weight :

1.8g

Package / Case :

TO-220-3

Power Dissipation-Max :

235W Tc

Factory Lead Time :

6 Weeks

FET Type :

N-Channel

Mount :

Through Hole

Vgs (Max) :

±30V

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2135pF @ 25V

Packaging :

Tube

Transistor Application :

SWITCHING

Element Configuration :

Single

Resistance :

94mOhm

Width :

4.83mm

Contact Plating :

Tin

Turn On Delay Time :

35 ns

Pbfree Code :

yes

Additional Feature :

AVALANCHE RATED