FDP33N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

6 Weeks

Power Dissipation-Max :

235W Tc

Width :

4.83mm

Height :

9.4mm

Fall Time (Typ) :

120 ns

Current - Continuous Drain (Id) @ 25°C :

33A Tc

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Series :

UniFET™

Turn On Delay Time :

35 ns

Contact Plating :

Tin

Rise Time :

230ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

33A

ECCN Code :

EAR99

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Package / Case :

TO-220-3

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

94mOhm

Rds On (Max) @ Id, Vgs :

94m Ω @ 16.5A, 10V

Number of Terminations :

3

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

250V

Mount :

Through Hole

Threshold Voltage :

5V

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±30V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

33A

Number of Pins :

3

Weight :

1.8g

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Published :

2004

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Voltage - Rated DC :

250V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

235W

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

75 ns

Number of Elements :

1

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

2135pF @ 25V

Length :

10.67mm

JESD-609 Code :

e3