FDN86246

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Published :

2010

Power Dissipation :

1.5W

FET Type :

N-Channel

ECCN Code :

EAR99

Mount :

Surface Mount

Power Dissipation-Max :

1.5W Ta

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

150V

Fall Time (Typ) :

2.9 ns

Transistor Application :

SWITCHING

Element Configuration :

Single

Radiation Hardening :

No

Height :

940μm

Weight :

30mg

Feedback Cap-Max (Crss) :

5 pF

Length :

1.4mm

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

261m Ω @ 1.6A, 10V

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Series :

PowerTrench®

Terminal Position :

Dual

Turn On Delay Time :

4.5 ns

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

3.4V

Number of Elements :

1

Mounting Type :

Surface Mount

Nominal Vgs :

3.4 V

Rise Time :

1.1ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Element Material :

SILICON

Width :

2.92mm

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

1.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 75V

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

ULTRA-LOW RESISTANCE

Turn-Off Delay Time :

8 ns